features n frequency of operation: 24 +/ - 2 ghz n fully integrated bias network n series diode, low current consumption design : +1 2ma for insertion loss, 0 volts for isolation n the device is wire bond compensated at all rf ports for rf matching n rugged, fully monolithic, glass encapsulated construction description the ma4sw424b - 1 device is a sp4t switch with integrated bias network u tilizing m/a - com's hmic tm (heterolithic microwave integrated circuit) process, us patent 5,268,310. this process allows the inco rporation of silicon pedestals that form series and/or shunt diodes or vias by imbedding them in a low loss, low dispersion glas s. by using small spacing between elements, this combination of silicon and glass gives hmic devices exceptional low loss and hi gh isolation performance with exceptional repeatability through lower millimeter frequencies. four mil square rf bond pads fac ilitate the use of low inductance ribbon bonds, while gold backside metalization allows for manual or automatic chip bonding usi ng 80au/20sn, sn62/pb36/ag2 solders or electrically conductive silver epoxy. each rf bond pad has adjacent wire - bonded tuning pa ds available to optimize the rf match for a particular frequency response. applications the ma4sw424b - 1 sp4t device is designed for 24 ghz automotive switching applications. insertion loss is achieved with + 12 ma @ + 4 v and isolation is achieved with 0v d.c. bias. the rf bias network is integrated into the hmic swich for ease of use and space consideration. monolithic sp4t pin diode switch with integrated bias network ma4sw424b - 1 v 1.00 outline drawing parameter value operating temperature - 65 c to +1 25 c storage temperature - 65 c to +1 50 c rf c.w. incident power @ +20 ma + 30 dbm dc bias current +40 ma absolute maximum ratings 1 @ ta = + 25 c (unless otherwise specified) 1. exceeding any of these values may result in permanent damage nominal die dimensions dim inches millimeters min max min max a 0.100 0.104 2.54 2.64 b 0.131 0.135 3.33 3.43 c 0.061 0.062 1.55 1.57 d 0.027 0.028 0.70 0.72 e 0.064 0.065 1.63 1.65 f 0.091 0.092 2.31 2.33 g 0.025 0.026 0.63 0.65 h 0.052 0.052 1.31 1.33 i 0.019 0.020 0.48 0.50 note: 1. rf and dc bond pads are 4 mils (0.10 mm) square
monolithic sp4t pin diode switch with integrated bias network ma4sw424b - 1 v 1.00 m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without not ice. visit www.macom.com for additional data sheets and product information. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 2 1. typical switching speed measured from 10 % to 90 % of detected rf signal driven by ttl compatible drivers using rc output spiking network, where r = 50 ? 200 w , c = 390 ? 560 pf. operation of the ma4sw424b - 1 electrical specifications @ t a = + 25 c (on - wafer measurements only) parameters frequency minimum nominal maximum units insertion loss 24 ghz - 3.0 3.5 db isolation 24 ghz 37 40 - db input return loss 24 ghz - 9 - db switching speed 1 24 ghz - 200 - ns operation of the ma4sw424b - 1 series pin diode switch is achieved by the application of d.c. current ( 12ma ) to the bias port of the selected insertion loss port and 0v bias for the isolated ports. the control currents should be supplied by constant curr ent sources. d.c. bias conditions b2 b3 b4 b5 j1 - j2 j1 - j3 j1 - j4 j1 - j5 +12 ma 0 volts 0 volts 0 volts low loss isolation isolation isolation 0 volts +12 ma 0 volts 0 volts isolation low loss isolation isolation 0 volts 0 volts +12 ma 0 volts isolation isolation low loss isolation 0 volts 0 volts 0 volts +12 ma isolation isolation isolation low loss rf output conditions driver connections for the ma4sw424b - 1
monolithic sp4t pin diode switch with integrated bias network ma4sw424b - 1 v 1.00 m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without not ice. visit www.macom.com for additional data sheets and product information. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 3 mounting these chips have tiptau back metal. they can be die mounted with a gold - tin eutectic solder preform or electrically co nductive epoxy. mounting surface must be clean and flat. eutectic die attachment an 80/20 gold - tin eutectic solder preform is recommended with a work surface temperature of 255 c and a tool tip temperature of 265 c. when hot gas is applied, the tool t ip temperature should be 290 c. the chip should not be exposed to temperatures greater than 320 c for more than 20 seconds. no more than three seconds should be required for the attachment . sn62/pb36/ag2 solder is also acceptable for use. electrical ly conductive epoxy die attachment assembly should be preheated to 125 - 150 c. a controlled amount of electrically conductive e poxy should be used, approximately 1 to 2 mils thickness for best electrical and thermal conductivity. a thin epoxy fillet shou ld be visible around the perimeter of the chip after placement. cure epoxy per manufacturer?s time - temperature schedule. assembly considerations the following precautions should be observed for successful assembly of the die. cleanliness these chi ps should be handled in a clean environment. do not attempt to clean die after installation. electro - static sensitivity the ma 4sw424b - 1 series pin diode switch is esd, class 1 sensitive. the proper esd handling procedures should be used. wire bonding t hermosonic wedge or ball bonding using 0.003? x 0.00025? gold ribbon or 0.001? diameter gold wire is recommended. a stage tempe rature of 150 c and a force of 18 to 22 grams should be used. ultrasonic energy should be adjusted to the minimum required. rf bonds should be as short as possible for lowest parasitics. one mil diameter gold wire results in approximately 0.02 nh / mil l ength. ma4sw424b - 1 topology
monolithic sp4t pin diode switch with integrated bias network ma4sw424b - 1 v 1.00 m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without not ice. visit www.macom.com for additional data sheets and product information. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 4 microwave performance MA4SW424B-1 typical input return loss -25.00 -20.00 -15.00 -10.00 -5.00 0.00 22 22.5 23 23.5 24 24.5 25 25.5 26 frequency (ghz) reurn loss (db) j1-j2 j1-j3 j1-j4 j1-j5 MA4SW424B-1 typical insertion loss -5.00 -4.00 -3.00 -2.00 -1.00 0.00 22 22.5 23 23.5 24 24.5 25 25.5 26 frequency (ghz) i. loss (db) j1-j2 j1-j3 j1-j4 j1-j5
monolithic sp4t pin diode switch with integrated bias network ma4sw424b - 1 v 1.00 m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without not ice. visit www.macom.com for additional data sheets and product information. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 5 microwave performance MA4SW424B-1 typical output return loss -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 22 22.5 23 23.5 24 24.5 25 25.5 26 frequency (ghz) return loss (db) j2 j3 j4 j5 MA4SW424B-1 typical isolation -80.00 -70.00 -60.00 -50.00 -40.00 -30.00 -20.00 -10.00 0.00 22 22.5 23 23.5 24 24.5 25 25.5 26 frequency (ghz) isolation (db) j1-j2 j1-j3 j1-j4 j1-j5 rf performance notes 1. the graphs represent on - wafer measurements only. due to the nature of the design and the implementation of the device, ribbon / wire bonding will shift the frequency response for better rf match at 24ghz. - recommended wire: (2) 1mil dia. wire, 10mils long or less per rf bond pad. - recommended ribbon: (1) ? x 3mil ribbon, 10 mils long or less per rf bo nd pad. 2. tuning stubs are positioned adjacent to each rf pad to optimize performance.
monolithic sp4t pin diode switch with integrated bias network ma4sw424b - 1 v 1.00 m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without not ice. visit www.macom.com for additional data sheets and product information. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 6 ma4sw424b - 1 schematic b5 dc bias j1 ( common port ) j2 j3 j4 j5 b2 dc bias
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